march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp30xxf3 (lv) overvoltage protector series TISP3072F3,tisp3082f3 low-voltage dual bidirectional thyristor overvoltage protectors device symbol ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge planar passivated junctions low off-state current <10 a rated for international surge wave shapes these low-voltage dual bidirectional thyristor protectors are designed to protect isdn applications against transients caused by lightning strikes and a.c. power lines. offered in two voltage variants to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. the high crowbar holding current helps prevent d.c. latchup as the current subsides. these monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. how to order d package (top view) description .............................................. ul recognized component device v drm v v (bo) v 3072f3 58 72 3082f3 66 82 waveshape standard i tsp a 2/10 s gr-1089-core 80 8/20 s iec 61000-4-5 70 10/160 s fcc part 68 60 10/700 s itu-t k.20/21 fcc part 68 50 10/560 s fcc part 68 45 10/1000 s gr-1089-core 35 1 2 3 45 6 7 8 g g g g nc t r nc nc - no internal connection g tr sd3xaa terminals t, r and g correspond to the alternative line designators of a, b and c *rohs directive 2002/95/ec jan 27 2003 including annex * r o h s c o m p l i a n t device package carrier tisp30xxf3 d, small-outline tape and reeled tisp30xxf3dr-s insert xx value corresponding to protection voltages of 72 and 82 order as
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. electrical characteristics for the t and r terminals, t a = 25 c (unless otherwise noted) absolute maximum ratings, t a = 25 c (unless otherwise noted) tisp30xxf3 (lv) overvoltage protector series rating symbol value unit repetitive peak off-state voltage, 0 c < t a < 70 c ?3072f3 ?3082f3 v drm 58 66 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 120 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 80 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 50 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 70 10/160 (fcc part 68, 10/160 voltage wave shape) 60 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 55 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 38 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 50 5/320 (fcc part 68, 9/720 voltage wave shape, single) 50 10/560 (fcc part 68, 10/560 voltage wave shape) 45 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 35 non-repetitive peak on-state current, 0 c < t a < 70 c (see notes 1 and 3) 50 hz, 1 s i tsm 4.3 a initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s junction temperature t j -65 to +150 c storage temperature range t stg -65 to +150 c notes: 1. further details on surge wave shapes are contained in the applications information section. 2. initially the tisp ? must be in thermal equilibrium with 0 c march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. electrical characteristics for t and g or r and g terminals, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm , 0 c march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter measurement information tisp30xxf3 (lv) overvoltage protector series figure 1. voltage-current characteristics for any terminal pair -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) i (br) v (br) v (br)m v drm i drm v d i d i h i t v t i tsm i tsp -i quadrant iii switching characteristic pmxxaa
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g or t and g terminals tisp30xxf3 (lv) overvoltage protector series figure 2. figure 3. figure 4. figure 5. t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0001 001 01 1 10 100 tc3laf v d = -50 v v d = 50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc3lai v (bo) v (br) v (br)m positive polarity normalized to v (br) i (br) = 100 a and 25 c t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc3laj v (bo) v (br) v (br)m negative polarity normalized to v (br) i (br) = 100 a and 25 c v t - on-state voltage - v 23456789 11 0 i t - on-state current - a 1 10 100 tc3lal -40 c 150 c 25 c off-state current vs junction temperature normalized breakdown voltages vs junction temperature normalized breakdown voltages vs junction temperature on-state current vs on-state voltage
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp30xxf3 (lv) overvoltage protector series typical characteristics - r and g or t and g terminals figure 6. figure 7. figure 8. figure 9. t j - junction temperature - c -25 0 25 50 75 100 125 150 i h , i (bo) - holding current, breakover current - a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 tc3lah i (bo) i h di/dt - rate of rise of principle current - a/ s 0001 001 01 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 tc3lab positive negative terminal voltage - v 01 1 10 off-state capacitance - pf 10 100 tc3lae 50 positive bias negative bias t j - junction temperature - c -25 0 25 50 75 100 125 150 off-state capacitance - pf 10 100 tc3lad 500 terminal bias = 0 terminal bias = 50 v terminal bias = -50 v holding current & breakover current vs junction temperature normalized breakover voltage vs rate of rise of principle current off-state capacitance vs terminal voltage off-state capacitance vs junction temperature
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g or t and g terminals figure 10. decay time - s 10 100 1000 maximum surge current - a 10 100 1000 tc3laa 2 surge current vs decay time tisp30xxf3 (lv) overvoltage protector series
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp30xxf3 (lv) overvoltage protector series typical characteristics - r and t terminals figure 11. figure 12. figure 13. t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0001 001 01 1 10 100 tc3lag v d = 50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc3lak v (bo) v (br) v (br)m both polarities normalized to v (br) i (br) = 100 a and 25 c di/dt - rate of rise of principle current - a/ s 0001 001 01 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 tc3lac off-state current vs junction temperature normalized breakdown voltages vs junction temperature normalized breakdown voltages vs rate of rise of principal current
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. thermal information tisp30xxf3 (lv) overvoltage protector series figure 14. figure 15. t - current duration - s 01 1 10 100 1000 i trms - maximum non-recurrent 50 hz current - a 1 10 ti3laa v gen = 250 vrms r gen = 10 to 150 ? t - power pulse duration - s 00001 0001 001 01 1 10 100 1000 z ja - transient thermal impedance - c/w 1 10 100 ti3maa maximum non-recurring 50 hz current vs current duration thermal response
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. the electrical characteristics of a tisp ? device are strongly dependent on junction temperature, t j . hence, a characteristic value will depend on the junction temperature at the instant of measurement. the values given in this data sheet were measured on commercial test ers, which generally minimize the temperature rise caused by testing. application values may be calculated from the parameters temperatur e coefficient, the power dissipated and the thermal response curve, z (see m. j. maytum, transient suppressor dynamic parameters. ti technical journal, vol. 6, no. 4, pp.63-70, july-august 1989). electrical characteristics lightning surge wave shape notation generators current rating applications information tisp30xxf3 (lv) overvoltage protector series most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50 % of the maximum amplitude. the notation used for the wave shape is amplitude, rise time/decay time . a 50 a, 5/310 s wave shape would have a peak current value of 50 a, a rise time of 5 s and a decay time of 310 s. the tisp ? device surge current graph comprehends the wave shapes of commonly used surges. there are three categories of surge generator type, single wave shape, combination wave shape and circuit defined. single wave shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g., 10/1000 s open circuit voltage and short circuit current). combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g., 1.2/50 s open circuit voltage and 8/20 s short circuit current). circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 s open circuit voltage generator typically produces a 5/310 s short circuit current). if the combination or circuit defined generators operate into a finite resistance, the wave shape produced is intermediate between the open circuit and short circuit values. when the tisp ? deviceswitches into the on-state, it has a very low impedance. as a result, although the surge wave shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to assess the required tisp ? surge capability. as an example, the itu-t k.21 1.5 kv, 10/700 s open circuit voltage surge is changed to a 38 a, 5/310 s current waveshape when driving into a short circuit. thus, the tisp ? surge current capability, when directly connected to the generator, will be found for the itu-t k.21 waveform at 310 s on the surge graph and not 700 s. some common short circuit equivalents are tabulated below: standard open circuit voltage short circuit current itu-t k.21 1.5 kv, 10/700 s 37.5 a, 5/310 s itu-t k.20 1 kv, 10/700 s 25 a, 5/310 s iec 61000-4-5, combination wave generator 1.0 kv, 1.2/50 s 500 a, 8/20 s telcordia gr-1089-core 1.0 kv, 10/1000 s 100 a, 10/1000 s telcordia gr-1089-core 2.5 kv, 2/10 s 500 a, 2/10 s fcc part 68, type a 1.5 kv, <10/>160 s 200 a,<10/>160 s fcc part 68, type a 800 v, <10/>560 s 100 a,<10/>160 s fcc part 68, type b 1.5 kv, 9/720 s 37.5 a, 5/320 s any series resistance in the protected equipment will reduce the peak circuit current to less than the generators short circui t value. a 1 kv open circuit voltage, 100 a short circuit current generator has an effective output impedance of 10 ? (1000/100). if the equipment has a series resistance of 25 ? , then the surge current requirement of the tisp? device becomes 29 a (1000/35) and not 100 a.
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. the protection voltage, (v (bo) ), increases under lightning surge conditions due to thyristor regeneration. this increase is dependent on the rate of current rise, di/dt, when the tisp ? device is clamping the voltage in its breakdown region. the v (bo) value under surge conditions can be estimated by multiplying the 50 hz rate v (bo) (250 v/ms) value by the normalized increase at the surges di/dt (figure 7). an estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. as an example, the itu-t k.21 1.5 kv, 10/700 s surge has an average dv/dt of 150 v/ s, but, as the rise is exponential, the initial dv/dt is higher, being in the region of 450 v/ s. the instantaneous generator output resistance is 25 ? . if the equipment has an additional series resistance of 20 ? , the total series resistance becomes 45 ? . the maximum di/dt then can be estimated as 450/45 = 10 a/ s. in practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the ti sp ? breakdown region. capacitance off-state capacitance protection voltage tisp30xxf3 (lv) overvoltage protector series the off-state capacitance of a tisp ? device is sensitive to junction temperature, t j , and the bias voltage, comprising of the d.c. voltage, v d , and the a.c. voltage, v d . all the capacitance values in this data sheet are measured with an a.c. voltage of 100 mv. the typical 25 c variation of capacitance value with a.c. bias is shown in figure 16. when v d >> v d , the capacitance value is independent on the value of v d . the capacitance is essentially constant over the range of normal telecommunication frequencies. applications information figure 16. v d - rms ac test voltage - mv 1 10 100 1000 normalized capacitance 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 aixxaa normalized to v d = 100 mv dc bias, v d = 0 normalized capacitance vs rms ac test voltage
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. figure 17 shows a three terminal tisp ? device with its equivalent delta capacitance. each capacitance, c tg , c rg and c tr , is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge. if wire r is biased at a larger potenti al than wire t, then c tg >c rg . capacitance c tg is equivalent to a capacitance of c rg in parallel with the capacitive difference of (c tg -c rg ). the line capacitive unbalance is due to (c tg -c rg ) and the capacitance shunting the line is c tr +c rg /2. all capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitiv e unbalance effects. simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is included. applications information tisp30xxf3 (lv) overvoltage protector series longitudinal balance figure 17. c tg c rg c tr equipment t r g (c tg -c rg ) c rg c tr equipment t r g c rg c tg > c rg equivalent unbalance aixxab tisp is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. bourns is a registered trademark of bourns, inc. in the u.s. and other countries.
|
